Glossary:IGBT: Difference between revisions
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An Insulated Gate Bipolar Transistor or IGBT is a device in which a [[ | An Insulated Gate Bipolar Transistor or IGBT is a device in which a [[Glossary:MOSFET|MOSFET]] and a [[Glossary:Junction Transistor|bipolar transistor]] are integrated into a single structure offering many of the advantages of both types of device. IGBTs are therefore capable of operating at both very high [[Glossary:Volt|voltages]] and very high [[Glossary:Amp|currents]]. | ||
Latest revision as of 21:21, 21 March 2019
An Insulated Gate Bipolar Transistor or IGBT is a device in which a MOSFET and a bipolar transistor are integrated into a single structure offering many of the advantages of both types of device. IGBTs are therefore capable of operating at both very high voltages and very high currents.