Glossary:IGBT: Difference between revisions
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Revision as of 20:59, 21 March 2019
An Insulated Gate Bipolar Transistor or IGBT is a device in which a MOSFET and a bipolar transistor are integrated into a single structure offering many of the advantages of both types of device. IGBTs are therefore capable of operating at both very high voltages and very high currents.